DRF : Sujet de thèse SL-DRF-17-0248
The target of this thesis is to assess the advantages and physical limits of Ge doping of GaN as compared to Si doping, by analyzing Ge-doped thin films and NWs by means of cutting-edge structural characterization, namely Atom Probe Tomography (APT) and transmission electron microscopy (TEM), and correlating the structural/chemical features with the optical and electrical performance.
The nanostructures will be designed in view of their incorporation in GaN LED devices:
* (Al)GaN thin films and quantum wells: Ge is expected to increase the n-type GaN thickness before cracking. Side effects on resistivity and structural and optical properties are to be evaluated. The onset of DX behavior in AlGaN will be studied.
* GaN NWs: The potential improvement of the NW morphology and homogeneity of the dopant distribution are to be studied.
* Impact in the complete device structure: We will evaluate the effect of Ge doping on the uppermost layers of the LEDs, including the presence or not of segregation or memory effects.
Photonique, Electronique et Ingénierie Quantiques
Laboratoire de Nano Physique des Semi-Conducteurs
Centre : Grenoble
Date souhaitée pour le début de la thèse : 01/10/2017
Ecole Doctorale de Physique de Grenoble
17 av. des Martyrs
38054 Grenoble cedex 9