DAM : Thesis SL-DAM-14-0946

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Research field

Solid state physics, surfaces and interfaces / Solid state physics, chemistry and nanosciences
Theoretical Physics / Theoretical physics

Title

Study using atomic scale simulations of the effects of displacements induced by irradiation in electronic components

Abstract

Irradiations in microelectronic components can lead to different effects which can be characterized by a degradation of the components performances. These effects will also affect negatively the lifetime and the reliability of the components. One reasons of these effects are the atomic displacements. The aim of this thesis is to characterize at the atomic scale using simulation methods as classical molecular dynamics or ab initio molecular dynamics the phenomena of atomic displacements in order to improve the hardening of components under irradiation. In this study, we will treat not only materials used in the current transistor generations (Si,SiO2, HfO2) but also the ones that are guessed for the future generations of components (Ge,GeO2,Al2O3). This study will be linked with simulation at higher levels and dedicated experiments.

Location

DCRE
SEIM

Centre : DAM Ile de France
Starting date : 01/10/2014

Contact person

Nicolas RICHARD
CEA / DAM/DCRE/SEIM/LCTD
CEA/DIF/DAM

Bruyères-le-Châtel - 91297 Arpajon Cedex




Phone : 01 69 26 40 00

University / Graduate School


Thesis supervisor

ALAIN ESTEVE
CNRS-LAAS / Nano Ingénierie et Intégration Systèmes
Laboratoire d'Analyse et d'Architecture des Systèmes

7, avenue du Colonel Roche

BP 54200

31031 Toulouse cedex 4


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