Solid state physics, surfaces and interfaces / Solid state physics, chemistry and nanosciences
Theoretical Physics / Theoretical physics
Study using atomic scale simulations of the effects of displacements induced by irradiation in electronic components
Irradiations in microelectronic components can lead to different effects which can be characterized by a degradation of the components performances. These effects will also affect negatively the lifetime and the reliability of the components. One reasons of these effects are the atomic displacements. The aim of this thesis is to characterize at the atomic scale using simulation methods as classical molecular dynamics or ab initio molecular dynamics the phenomena of atomic displacements in order to improve the hardening of components under irradiation. In this study, we will treat not only materials used in the current transistor generations (Si,SiO2, HfO2) but also the ones that are guessed for the future generations of components (Ge,GeO2,Al2O3). This study will be linked with simulation at higher levels and dedicated experiments.
Centre : DAM Ile de France
Starting date : 01/10/2014