The electronic properties of graphene (in particular the high carrier mobility) are ideally suited for high frequency electronics. When handled in solution, this 2D material is a serious competitor of organic semiconductors for the realization of fast and flexible circuits. The LEM recently initiated the study of field effect transistors using solution-based graphene as the channel material and achieved cut-off frequencies as high as 8 GHz on flexible (plastic) substrates. However, graphene is a semi-metal. The charge density can be modulated but the current in such transistor cannot be totally blocked, which limits the perspectives for analog RF electronic applications. Graphene can be turned into a semiconductor when structured in the form of nano-ribbons with sub-10nm width but this structuration severely degrades its electronic properties. Other materials can, just a graphite, be exfoliated to form single-layer 2D crystals. Among them, some are semiconductors, such as for example MoS2. Charge mobility in MoS2 is lower than in graphene but equivalent to the one of graphene nano-ribbons. The aim of this project is to study the electronic properties of 2D semiconductors and to compare their merits to graphene for high frequency electronics.